High Brightness Laser Diodes and Fiber Coupled Laser Diodes
نویسندگان
چکیده
منابع مشابه
High-Brightness Unstable-Resonator Semiconductor Laser Diodes
High-power high-brightness unstable-resonator edge-emitting semiconductor laser diodes with dry-etched curved mirrors were fabricated and characterized. The epitaxial structure was optimized for high output power operation and consists of a GaAs/AlGaAs gradedindex separate-confinement heterostructure (GRINSCH) with a single 980-nm-emitting InGaAs quantum well. The curved mirrors of the unstable...
متن کاملImproving Blue InGaN Laser Diodes Performance with Waveguide Structure Engineering
To enhance lasers’ power and improve their performance, a model wasapplied for the waveguide design of 400 nm InGaN/InGaN semiconductor laser, whichis much easier to implement. The conventional and new laser structures weretheoretically investigated using simulation software PICS3D, which self-consistentlycombines 3D simulation of carrier transport, self-heating, and opt...
متن کاملHigh-Power Pure Blue InGaN Laser Diodes
We fabricated high-power pure blue laser diodes (LDs) by using GaN-based material for full-color laser display. The operating output power, voltage and wall-plug efficiency of the LDs at forward current of 1.0 A were 1.17 W, 4.81 V and 24.3%, respectively. The estimated lifetime of the LDs was over 30,000 hours under continuous-wave operation. key words: InGaN, GaN, high-power laser, blue LD
متن کاملInGaN-BASED LASER DIODES
UV InGaN and GaN single-quantum well structure light-emitting diodes (LEDs) were grown on epitaxially laterally overgrown GaN (ELOG) and sapphire substrates. When the emission wavelength of UV InGaN LEDs was shorter than 380 nm, the external quantum efficiency (EQE) of the LED on ELOG was much higher than that on sapphire, but only for highcurrent operation. At low-current operation, both LEDs ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: The Review of Laser Engineering
سال: 2011
ISSN: 0387-0200,1349-6603
DOI: 10.2184/lsj.39.674